| PART |
Description |
Maker |
| CY7C197BN-25PC CY7C197BN-15VC |
256-Kb (256 K x 1) Static RAM Fast access time: 15 ns
256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 15 ns, PDSO24
256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 25 ns, PDIP24
|
Cypress Semiconductor, Corp.
|
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| IDT71V416VL IDT71V416VS15YGI IDT71V416VL10BEG IDT7 |
From old datasheet system
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PDSO44
Transformers Only Module 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| CY7C1002-12PC CY7C1001-12PC CY7C1001-25VC CY7C1001 |
256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 12 ns, PDIP32
256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 25 ns, PDSO32
256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 20 ns, PDIP32
256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 20 ns, PDSO32
256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 20 ns, CDIP32
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY62138EV30 CY62138EV30LL-45BVXI CY62138EV3009 |
2-Mbit (256K x 8) MoBL Static RAM
2-Mbit (256K x 8) MoBL庐 Static RAM
2-Mbit (256K x 8) MoBL? Static RAM
2-Mbit (256K x 8) MoBL㈢ Static RAM
|
Cypress Semiconductor
|
| T15V2M08A-70P T15V2M08A T15V2M08A-100C T15V2M08A-5 |
256K X 8 LOW POWER CMOS STATIC RAM 256K × 8低功耗CMOS静态RAM
|
Taiwan Memory Technolog...
TMT[Taiwan Memory Technology]
TM Technology, Inc.
|
| IS61LF51218A-7.5B3 IS61LF51218A-7.5B2 IS61LF51218A |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| V62C21164096L-70BI V62C21164096L-70T V62C21164096L |
256K x 16, 0.20 um CMOS STATIC RAM 256K × 160.20微米的CMOS静态RAM
|
Mosel Vitelic, Corp.
|
| TC554161FTI-85V |
256K word x 16 Static RAM(256K x 16 静RAM)
|
Toshiba Corporation
|
| IS61LV2568L-10T-TR IS61LV2568L-8TL IS61LV2568L08 |
256K X 8 STANDARD SRAM, 8 ns, PDSO44 LEAD FREE, PLASTIC, TSOP2-44
256K x 8 HIGH-SPEED CMOS STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
|
| IS61C25616AL IS64C25616AL IS61C25616AL-10KI IS61C2 |
256K x 16 HIGH-SPEED CMOS STATIC RAM
256K X 16 STANDARD SRAM, 12 ns, PDSO44
256K x 16 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
